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SubArray.h
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SubArray.h
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//Copyright (c) 2015-2016, UT-Battelle, LLC. See LICENSE file in the top-level directory
// This file contains code from NVSim, (c) 2012-2013, Pennsylvania State University
//and Hewlett-Packard Company. See LICENSE_NVSim file in the top-level directory.
//No part of DESTINY Project, including this file, may be copied,
//modified, propagated, or distributed except according to the terms
//contained in the LICENSE file.
#ifndef SUBARRAY_H_
#define SUBARRAY_H_
#include "FunctionUnit.h"
#include "RowDecoder.h"
#include "Precharger.h"
#include "SenseAmp.h"
#include "Mux.h"
#include "typedef.h"
class SubArray: public FunctionUnit {
public:
SubArray();
virtual ~SubArray();
/* Functions */
void PrintProperty();
void Initialize(long long _numRow, long long _numColumn, bool _multipleRowPerSet, bool _split,
int _muxSenseAmp, bool _internalSenseAmp, int _muxOutputLev1, int _muxOutputLev2,
BufferDesignTarget _areaOptimizationLevel, int _num3DLevels);
void CalculateArea();
//void CalculateRC();
void CalculateLatency(double _rampInput);
void CalculatePower();
SubArray & operator=(const SubArray &);
/* Properties */
bool initialized; /* Initialization flag */
bool invalid; /* Indicate that the current configuration is not valid, pass down to all the sub-components */
bool internalSenseAmp; /* Indicate whether sense amp is within subarray */
long long numRow; /* Number of rows */
long long numColumn; /* Number of columns */
bool multipleRowPerSet; /* For cache design, whether a set is partitioned into multiple wordlines */
bool split; /* Whether the row decoder is at the middle of subarrays */
int muxSenseAmp; /* How many bitlines connect to one sense amplifier */
int muxOutputLev1; /* How many sense amplifiers connect to one output bit, level-1 */
int muxOutputLev2; /* How many sense amplifiers connect to one output bit, level-2 */
BufferDesignTarget areaOptimizationLevel;
int num3DLevels; /* Number of monolithic 3D levels in the subarray. */
bool voltageSense; /* Whether the sense amplifier is voltage-sensing */
double senseVoltage;/* Minimum sensible voltage */
double voltagePrecharge;
long long numSenseAmp; /* Number of sense amplifiers */
double lenWordline; /* Length of wordlines, Unit: m */
double lenBitline; /* Length of bitlines, Unit: m */
double capWordline; /* Wordline capacitance, Unit: F */
double capBitline; /* Bitline capacitance, Unit: F */
double resWordline; /* Wordline resistance, Unit: ohm */
double resBitline; /* Bitline resistance, Unit: ohm */
double resCellAccess; /* Resistance of access device, Unit: ohm */
double capCellAccess; /* Capacitance of access device, Unit: ohm */
double resMemCellOff; /* HRS resistance, Unit: ohm */
double resMemCellOn; /* LRS resistance, Unit: ohm */
double voltageMemCellOff; /* Voltage drop on HRS during read operation, Unit: V */
double voltageMemCellOn; /* Voltage drop on LRS druing read operation, Unit: V */
double resInSerialForSenseAmp; /* Serial resistance of voltage-in voltage sensing as a voltage divider, Unit: ohm */
double resEquivalentOn; /* resInSerialForSenseAmp in parallel with resMemCellOn, Unit: ohm */
double resEquivalentOff; /* resInSerialForSenseAmp in parallel with resMemCellOn, Unit: ohm */
double bitlineDelay; /* Bitline delay, Unit: s */
double chargeLatency; /* The bitline charge delay during write operations, Unit: s */
double columnDecoderLatency; /* The worst-case mux latency, Unit: s */
double bitlineDelayOn; /* Bitline delay of LRS, Unit: s */
double bitlineDelayOff; /* Bitline delay of HRS, Unit: s */
RowDecoder rowDecoder;
RowDecoder bitlineMuxDecoder;
Mux bitlineMux;
RowDecoder senseAmpMuxLev1Decoder;
Mux senseAmpMuxLev1;
RowDecoder senseAmpMuxLev2Decoder;
Mux senseAmpMuxLev2;
Precharger precharger;
SenseAmp senseAmp;
};
#endif /* SUBARRAY_H_ */